d ms 0 5 n60 n - channel depletion - mode mosfet bruckewell technology corporation rev. a - 2012 features depletion mode (normally on) advanced planar technology rugged poly - silicon gate cell structure fast switching speed rohs compliant/lead free esd sensitive applications normally - on switches smps start - up circuit linear amplifier converters constan t current source telecom bv dsx r ds(on) (max. ) i dss,min 600v 70 0 12ma absolute maximum ratings t a =25 unless otherwise specified symbol parameter DMS05N60 unit v dsx drain - to - source voltage [1] 600 v v dgx drain - to - gate voltage [1] 600 v i d continuous drain current 0.020 i dm pulsed drain current 0.081 a p d power dissipation 0.50 w v gs gate - to - source voltage ?0 v t l soldering temperature distance of 1.6mm from case for 10 seconds 300 t j and t stg operating and storage temperature range - 55~150 caution: stresses greater than those listed in the absolute maximum ratings may cause permanent damag e to the device. thermal characteristics symbol parameter DMS05N60 unit r ja thermal resistance, junction - to - ambient 250 k/w
d ms 0 5 n60 n - channel depletion - mode mosfet bruckewell technology corporation rev. a - 2012 electrical characteristics off characteristics ta=25 unless otherwise specifie d symbol parameter min. typ. max. unit test conditions bv dsx drain - to - source breakdown voltage 600 -- -- v v gs = - 5v,i d =250a -- -- 0.1 a v ds =600v,v gs = - 5v i d(off) drain - to - source teakage current -- -- 10 a v ds =600v,v gs = - 5v t j =125 -- -- 100 v gs =+20v,v ds =0v i gss gate - to - source leakage current -- -- - 100 na v gs = - 20v,v ds =0v on characteristics ta=25 unless otherwise specified symbol parameter min. typ. max. unit test conditions i dss saturated drain - to - source current 1 2 -- -- ma v gs =0v,v ds =25v r ds(on) static drain - to - source on - resistance -- 500 700 v gs =0v,i d =3ma [4] v gs(off) gate - to - source cut - off voltage - 2.7 -- - 1.5 v v ds =3v,i d =8a gfs forward transconductance -- 15.4 -- ms v ds =10v,i d =5ma dynamic characteristics essentially independent of operating temperature symbol parameter min. typ. max. unit test conditions c iss input capacitance -- 12.3 -- c oss oput capacitance -- 2.6 -- c rss reverse transfe r capacitance -- 1.8 -- pf v gs = - 5v v ds =25v f=1.0mhz q g total gate charge -- 1.55 -- q gs gate - to - source charge -- 0.12 -- q gd gate - to - drain (miller) charge -- 0.56 -- nc v gs = - 5v~5v v ds =300v,i d =5ma resistive switching characteristics essentially independent o f operating temperature symbol parameter min. typ. max. unit test conditions t d(on) turn - on delay time -- 4 -- t rise rise time -- 9 -- t d(off) turn - off delay time -- 14 -- t fall fall time -- 84 -- ns v gs = - 5v~5v v dd =300v,i d =5ma r g =20ohm source - dr ain dioe characteri stics ta=25 unless otherwise specified symbol parameter min. typ. max. unit test conditions v sd diode forward voltage -- -- 1.2 v i sd =3.0ma,v gs = - 10v note: [1] t j =+25 to +150 [2] repetitive rating, pulse width limited by maximum junction temperature. [3] pulse wi dth Q 380 s ; duty cycle Q 2%
d ms 0 5 n60 n - channel depletion - mode mosfet bruckewell technology corporation rev. a - 2012 characteristic curves
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